Interim .ieport, Hughes Research Laboratory, Research and Development

Technical Report DELkT-79-0252-1, May 1980. FUORS, Dennis, and Verma KrSRhna, "A Fully Implanted V-Groove Power

MOSFET," Technical Digest, IEEE Electron Devices International Meeting,.

Washington, D.C., 1978, pp. 657-60. Ghandi, S. K., Semiconductor Power Devices. New York: Wiley-Iriterscience,

1977.

Heng, T. M. S., et al., "Vertical Channel Metal-Oxide-Silicon Field Effect Transistor," Final Report, Westinghouse R&D Center, Pittsburg, Pa., Contract N00014-74-C-0012, Nov. 1, 1976.

Ни, Chknming, "A Parametric Study of Power.-MOSFETS," Proceedings, Pov. Electronics Specialists Conference (PESC), San Diego, Calif., June 1979.

Johnson, Robert J., and Helge Granberg, "Design, Construction and Perfor« mance of High Power RF VMOS Devices," Technical Digest, IEEE Electron Devices International Meeting, Washington, D.C., 1979, pp. 93-96.

Kay, Steeve, et al., "A New VMOS Power FET," Technical Digest, IEEE Electron Devices International Meeting, Washington, D.C., 1979, pp. 97-101.

LiDOW, A., et al., "Power Mosfet Technology," Technical Digest, IEEE Electron Devices International Meeting, Washington, D.C., 1979, pp. 79-83.

Nagata, Minoru, "Power Handling Capability of MOSFET," Proceedings, 8th Conference (1976 International) on Solid State Devices, Tokyo, 1976.

NiSHIZAWA, jun-ICHI, "Field-Effect Transistor versus Analog Transistor (Static Induction Transistor)," IEEE Trans. Electron Devices, ED-22, No. 4 (Apr. 1975), 185-97.

NiSHIZAWA, jun-lCHi, "Recent Progress and Potential of S.I.T." Proceedings, "Л International Conference on Solid State Devices, Tokyo, 1979.

NiSHIZAWA, JuN-iCHi and kenл Yamamoto, "High-Frequency High-Power Static Induction Transistor," IEEE Trans. Electron Devices, ED-25, No. 3 (Mar. 1978), 314-22.

Ohmi, Tadahiro, "Power Static Induction Transistor Technology," Technical Digest, IEEE Electron Devices International Meeting, Washington, D.C., 1979, pp. 84-87.

"Special Issue on Power MOS Devices," IEEE Trans. Electron Devices, ED-27, No.2 (Feb. 1980).

Tihanigi, JenoE, et al., MIS Field-Effect Transistor Having a Short Channel

Length," U.S. Patent 4,190,850 (Feb. 26, 1980).. Yukimoto, Yoshinori, et al., "1 GHz 20 W Static Induction Transistor," Pro-. ceedings, 9th International Conference on Solid State Devices, Tokyo, 1977.

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Beatty, Brent A., Surinder Kri.shna, and Michael S. Adler, "Second

Breakdown in Power Transistors Due to Avalanche Injection," IEEE Trans.

Electron Devices,, 23 (1976), 851-57. Declercq, Michael J., and James D. Plummer, "Avalanche Breakdown in

High-Voltage D-MOS Devices,"Trans. Electron Devices, 23 (1976), 1-4. Ghandhi, Sorab K., Senvconduclor Power Devices. New York: John Wiley &

Sons, Inc., 1977.

Herskowitz, GERAbD J., and Ronald B. Schilling, eds., Semiconductor Device Modeling for Computer-Aided Design. New York: McGraw-Hill Book Company, 1972.

Ни, Chenming, "A Parametric Study of Power MOSFETS," Conf Record, Power

Electronics Specialists Conference, 1979, Paper 5.7. Kay, Steeve, C. T. Trieu, and Bing h. Yeh, "A New VMOS Power FET," Technical Digest, IEEE Electron Devices Internationa! Meeting, Washington, D.C., 1979, pp. 97-101.. Krishna, SURINDER, "Second Breakdown in High Voltage MOS Transistors,"

Solid-state Electronics, 22 (1977), 875-78. Lazarus, M. J., "The Short Channel IGFET," IEEE Trans. Electron Devices, 22 (1975), 351.

LiDow, A., T. Herman, and H. W. Collins, "Power MOSFET Technology," Technical Digest, IEEE Electron Devices Internationa! Meeting, Washington, D.C., 1979, pp. 79-83.

National CSS, Inc., Ispice Short Channel MOSFET Model Note, Norwalk, Conn,, 1977.

•Omura, Y., and K. Ohwada, "Threshold Voltage Theory for a Short-Channel MOSFET Using a Surface Potential Distribution Model." Solid-State Electronics, 22 (1979), 1045-51.

PocHA, Michael D., and Robert W. Dutton,"A Computer-Aided Design Model for High Voltage Double Diffused MOS (DMOS) Transistors," IEEE Jour. Solid-State Circuits 11 (1976), 718-26.

PocHA, Michael D., J. D. Plummer, and J. D. Meindl, "Tradeoff between Threshold Voltage and Breakdown in High Voltage Doublu Diffused MOS Transistors," IEEE Trans. Electron Devices, 25 (1978), 1325-27.

RiCHMaN, Paul, MOS Field-Effect Transistors and Integrated Circuits. New York: John Wiley & Sons, Inc., 1973.

Temple, V. A. K., and P. V. Gray, "Theoretical Comparison of DMOS and VMOS Structures for Voltage and On-Resistance," Technical Digest, IEEE Electron Devices International Meeting, Washington, D.C., 1979, pp. 88-92.

ToYABLE, ToRU, Kkn Yamaguchi, and 8нолно AsAl, "A Numerical Model of Avalanche Breakdown in MOSFETs." IEEE Trans. Electron Devices, 25 (1978),

"825-32.

Wang, Paul P., "Device Characteristics of Short-Channel and Narrow-Width MOSFETs," IEEE Trans. Electron Devices, 25 (1978), 779-86.

.yoshida, isao., et al., "Thermal Stability and Secondary Breakdown in Planar Power MOSFETs." IEEE Trans. Electron Devices, 27 (1980), 395-98.

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boschert, Robert J., "Flyback Converters: Solid-State Solutions to Low-Cost Switching Power Supplies," £;ecfronics, Dec, 21, 1978, pp. 100-104.

Clemente, S., B. Pelly and R. Ruttonsha, "A Universal 100 kHz Power Supply Using a Single HEXFET"," International Rectifier Application Note 939, El Segundo, Calif., International Rectifier Semiconductor Division, 1981.

Doyle, John, M., Digital, Switching, and Timing Circuits, North Scituate, Mass." Duxbury Press, 1975.

iaVer, Robert J., "The ABCs of DC and AC Inverters," Motorola Application

Note AN-222. Phoenix, Ariz.: Motorola Semiconductor Products Division, 1972. Hirschberg, Walter j., Sessions Chairman, "The Future of Switching Power

Supplies," Session 34, ELECTRO, New Yor]<, 1979. Jackson, Herbert W., Introduction to Electric Circuits, 4th ed. Englewood

Cliffs, N.j.: Prentice-Hall, Inc., 1976. An excellent treatise on the subject of

transformers useful in switcher design. Magnetics Staff, "Inductor Design in Switching Regulators," Power-conversion

International, 6 (Jan.-Feb. 1980), 45-47. An excellent source for transformer

design information.

Maloney, Timothy j., Industrial Solid-State Electronics. Englewood Cliffs,

N.i.: Prentice-Hall, Inc., 1979. oxner, Ed, td. VMOS Applications Handbook. Santa Clara, Calif.: Siliconix

incorporated, June 1980. PlviT, Erich, and J. Saxarra, "Upgrade Your Switchers Analytically," Electronic.

Design, 26 (May 10, 1978), 108-13. ROEHR, Bill, "Mounting Techniques for Power Semiconductors," Motorolot

Application Note AN-778. Phoenix, Ariz.: Motorola Semiconductor Productsf

Inc., 1978.

RoEHR, William D., ed.. Switching Transistor Handbook. Phoenix, Ariz.;

Motorola Semiconductor Products Division, 1963. >40ehr, Bill, and Bryce Shiner, "Transient Thermal Resistance-General Datat

and Its Use," Motorola Application Note AN-569. Phoenix, Ariz.: Motorola,

Semiconductor Products Inc., 1972. SeVERNS, Rudolf, "The Design of Switchmode Converters above 100 kHz,"

Intersil Application Bulletin A034. Cupertino, Calif.: Intersil, Inc., 1980. Ал

excellent treatise on the subject of high-frequency switching power supplies,

rectifiers, and filters.

glOANE, T, H., H. A. Owen, Jr., and T. G., Wilson, "Switching Transients in-High-Frequency High-Power Converters Using Power MOSFETs," Proceedings Power Electronics Specialists Conference (PESC), San Diego, Calif., June 1979.

ZljMMER, Nathan, "Designing the Power-Handling Capabilities of MOS Power Devices," IEEE Trans. Electron Devices, 27 (1980), 1290-96. A careful study relating to the die attach of power MOSFETs to improve both thermal fatigue and reliability.

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BpnDaniel, D. j., and E. Ё. David, Jr., "Semiconductor Alternating Current, Motor Drives and Energy Conservation," Science, 206, No. 4420.(Nov. 16, 1979), 773-76.

Clemente, S., and B. Pelley, "A Chopper for Motor Speed Control Using Parallel Connected Power HEXFETs"," International Rectifier Application Note 941, El Segundo, Calif., International Rectifier Semiconductor Division, 1981.

Evans, Arthur D., et al., "Higher Power Ratings Extend VMOS FETs Dominion," Electronics, 51 (June 27, 1978), 105-12.

Jay, G. v., and Nick FrEYLING, "Pulse-Width Modulation for D-C Motor Speed Control," Motorola Application Note AN445. Phoenix, Ariz.: Motorola Semi-onductor Products Inc., 1972.